Dual N-Channel Enhancement Mode MOSFET



FEATUREs 
•  20V/6A, RDS(ON) =28mΩ(typ.) @ VGS=4.5V
                 RDS(ON) =34mΩ(typ.) @ VGS=2.5V
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free Available (RoHS Compliant)

Applications
• Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems