AO8806(2002) Datasheet - Alpha and Omega Semiconductor
Part Name
AO8806
Other PDF
PDF
page
4 Pages
File Size
173.6 kB
MFG CO.
Alpha and Omega Semiconductor
General Description
The AO8806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its commondrain configuration.
FEATUREs
VDS (V) = 20V
ID = 6 A
RDS(ON) < 25mΩ (VGS = 4.5V)
RDS(ON) < 30mΩ (VGS = 2.5V)
RDS(ON) < 40mΩ (VGS = 1.8V)
Part Name
Description
PDF
MFG CO.
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor ( Rev : 2003 )
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Share Link: