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AM29LV800BT90DW5C1 Datasheet - Advanced Micro Devices

AM29LV800BB90RDG5C1 image

Part Name
AM29LV800BT90DW5C1

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9 Pages

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80.2 kB

MFG CO.
AMD
Advanced Micro Devices AMD

GENERAL DESCRIPTION
The Am29LV800B in Known Good Die (KGD) form is an 8 Mbit, 3.0 volt-only Flash memory. AMD defines KGD as standard product in die form, tested for functionality and speed. AMD KGD products have the same reliability and quality as AMD products in packaged form.

DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
   — 2.7 to 3.6 V for read, program, and erase
      operations
   — Ideal for battery-powered applications
■ Manufactured on 0.35 µm process technology
■ High performance
   — 90 or 120 ns access time
■ Low power consumption (typical values at 5 MHz)
   — 200 nA Automatic Sleep mode current
   — 200 nA standby mode current
   — 7 mA read current
   — 15 mA program/erase current
■ Flexible sector architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
      fifteen 64 Kbyte sectors (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and
      fifteen 32 Kword sectors (word mode)
   — Supports full chip erase
   — Sector Protection features:
      A hardware method of locking a sector to
      prevent any program or erase operations within
      that sector
      Sectors can be locked in-system or via
      programming equipment
      Temporary Sector Unprotect feature allows code
      changes in previously locked sectors
■ Unlock Bypass Program Command
   — Reduces overall programming time when
      issuing multiple program command sequences
■ Top or bottom boot block configurations
   available
■ Embedded Algorithms
   — Embedded Erase algorithm automatically
      preprograms and erases the entire chip or any
      combination of designated sectors
   — Embedded Program algorithm automatically
      writes and verifies data at specified addresses
■ Minimum 1,000,000 write cycle guarantee per
   sector
■ Compatibility with JEDEC standards
   — Pinout and software compatible with singlepower supply Flash
   — Superior inadvertent write protection
■ Data# Polling and toggle bits
   — Provides a software method of detecting
      program or erase operation completion
■ Ready/Busy# pin (RY/BY#)
   — Provides a hardware method of detecting
      program or erase cycle completion
■ Erase Suspend/Erase Resume
   — Suspends an erase operation to read data from,
      or program data to, a sector that is not being
      erased, then resumes the erase operation
■ Hardware reset pin (RESET#)
   — Hardware method to reset the device to reading
      array data

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Part Name
Description
PDF
MFG CO.
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory—Die Revision 1
Advanced Micro Devices
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1
Advanced Micro Devices
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory—Die Revision 2
Advanced Micro Devices
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1
Advanced Micro Devices
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1
Advanced Micro Devices
Am29LV800B Known Good Die 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory—Die Revision 1
Advanced Micro Devices
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Advanced Micro Devices
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Advanced Micro Devices
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Advanced Micro Devices
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Advanced Micro Devices

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