datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  STMicroelectronics  >>> ADB18PS PDF

ADB18PS Datasheet - STMicroelectronics

ADB18PS image

Part Name
ADB18PS

Other PDF
  no available.

PDF
DOWNLOAD     

page
3 Pages

File Size
31.2 kB

MFG CO.
ST-Microelectronics
STMicroelectronics ST-Microelectronics

DESCRIPTION
The ADB18PS combines a diode bridge and a clamping protection function.
Integrated monolithically within a SMD package, this device allows space saving and greater reliability.
It provides both rectification and protection for low power equipment directly supplied by mains.


FEATURES
■ Peak pulse power dissipation 100 W (8/20 µs)
■ Stand-off voltage : 18 V
■ Maximum DC current : 0.5 A
■ Clamping voltage : VCL < 50 V (8/20 µs)


BenefitS
■ Protection combined with rectification
■ High reliability confered by monolithic construction
■ Space saving
■ Cost effective solution

MAIN APPLICATIONS
Any electronic equipment needing a diode bridge
and protection against transient overvoltage :
■ Caller Id
■ Handset


Part Name
Description
PDF
MFG CO.
FULLY AUTOPROTECTED POWER MOSFET
STMicroelectronics
”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET
STMicroelectronics
”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET ( Rev : 1996 )
STMicroelectronics
OMNIFET FULLY AUTOPROTECTED POWER MOSFET
STMicroelectronics
FULLY AUTOPROTECTED POWER MOSFET
STMicroelectronics
”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET ( Rev : 2013 )
STMicroelectronics
”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET
STMicroelectronics
“OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET
STMicroelectronics
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET
STMicroelectronics
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET
STMicroelectronics

Share Link: GO URL

Korean한국어 Chinese简体中文 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]