ACE633FM+H Datasheet - ACE Technology Co., LTD.
Part Name
ACE633FM+H
Other PDF
no available.
PDF
page
10 Pages
File Size
1.1 MB
MFG CO.
ACE Technology Co., LTD.
Description
The ACE633 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
FEATUREs
● N-Channel
VDS(V)=60V
ID=5A
RDS(ON)
<35mΩ (VGS=10V)
<40mΩ (VGS=4.5V)
● P-Channel
VDS(V)=-60V
ID=-3.5A
RDS(ON)
<75mΩ (VGS=-10V)
<90mΩ (VGS=-4.5V)
Part Name
Description
PDF
MFG CO.
60V Complementary Enhancement Mode Field Effect Transistor ( Rev : V2 )
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor ( Rev : V2 )
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