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A1160(1997) Datasheet - Toshiba

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Part Name
A1160

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MFG CO.
Toshiba
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STROBE FLASH APPLICATIONS
MEDIUM POWER AMPLIFIER APPLICATIONS

• High DC Current Gain and Excellent hFE Linearity
    : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A)
    : hFE (2) = 60 (Min.), 120 (Typ.) (VCE = −1 V, IC = −4 A)
• Low Saturation Voltage
    : VCE (sat) = −0.5 V (Max.) (IC = −2 A, IB = −50 mA)


Part Name
Description
PDF
MFG CO.
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2007 )
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
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