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74HC4852PW-Q100,11 Datasheet - Nexperia B.V. All rights reserved

74HC4852BQ-Q100 image

Part Name
74HC4852PW-Q100,11

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MFG CO.
NEXPERIA
Nexperia B.V. All rights reserved NEXPERIA

General description
The 74HC4852-Q100; 74HCT4852-Q100 are high-speed Si-gate CMOS devices and are specified in compliance with JEDEC standard no. 7A.
The injection-current effect control allows signals at disabled analog input channels to exceed the supply voltage without affecting the signal of the enabled analog channel. This eliminates the need for external diode/resistor networks typically used to keep the analog channel signals within the supply-voltage range.


FEATUREs and benefits
■ Automotive product qualification in accordance with AEC-Q100 (Grade 1)
    ◆ Specified from -40 °C to +85 °C and from -40 °C to +125 °C
■ Injection-current cross coupling < 1 mV/mA
■ Wide supply voltage range from 2.0 V to 6.0 V for 74HC4852-Q100
■ ESD protection:
    ◆ MIL-STD-883, method 3015 exceeds 2000 V
    ◆ HBM JESD22-A114F exceeds 2000 V
    ◆ MM JESD22-A115-A exceeds 200 V (C = 200 pf, R = 0 Ω)
■ Latch-up performance exceeds 100 mA per JESD 78 Class II level A
■ Low ON-state resistance:
    ◆ 400 Ω (typical) at VCC = 2.0 V
    ◆ 215 Ω (typical) at VCC = 3.0 V
    ◆ 120 Ω (typical) at VCC = 3.3 V
    ◆ 76 Ω (typical) at VCC = 4.5 V
    ◆ 59 Ω (typical) at VCC = 6.0 V


APPLICATIONs
■ Analog multiplexing and demultiplexing
■ Digital multiplexing and demultiplexing
■ Signal gating
■ Automotive application

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