General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

FEATUREs
• -8.8 A, -30 V. RDS(ON) = 0.020 Ω @ VGS = -10 V
                    RDS(ON) = 0.035 Ω @ VGS = -4.5 V
• Extended VGSS range (±25V) for battery applications.
• Low gate charge (19nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON).
• High power and current handling capability.