N-Channel Enhancement Mode Field Effect Transistor

General Description
The AO4468 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Standard Product AO4468 is Pb-free (meets ROHS & Sony 259 specifications). AO4468L is a Green Product ordering option. AO4468 and AO4468L are electrically identical.

FEATUREs
   VDS (V) = 30V
   ID = 11.6A (V GS = 10V)
   RDS(ON) < 14mΩ (VGS = 10V)
   RDS(ON) < 22mΩ (VGS = 4.5V)