34NM60ND(2013) Datasheet - STMicroelectronics
Part Name
34NM60ND
Other PDF
PDF
page
22 Pages
File Size
313.1 kB
MFG CO.
STMicroelectronics
Description
These devices are N-channel FDmesh™ V Power MOSFETs produced using STs MDmesh™ V technology, which is based on an innovative propritary vertical structure. The resulting product boasts an extremely low on-resistance that is unrivaled among silicon-based Power MOSFETs, and superior switching performance with intrinsic fast-recovery body diode.
FEATUREs
• The world’s best RDS(on) in TO-220 amongst
the fast recovery diode devices
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche
capabilities
APPLICATIONs
• Switching applications
Part Name
Description
PDF
MFG CO.
N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 ( Rev : 2012 )
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N-channel 600 V - 0.25 Ω typ., 13 A FDmesh™ II Power MOSFET
(with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 packages
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N-channel 600 V, 0.13 Ω, 21 A FDmesh™ II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220, TO-247 ( Rev : 2011 )
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N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages
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N-channel 600 V, 0.2 Ω, 16 A MDmesh™ II Power MOSFET in D2PAK, TO-220FP, I2PAK, TO-220 and TO-247
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N-channel 600 V, 0.11 Ω, 25 A FDmesh™ II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247
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N-channel 600 V, 0.17 Ω, 17 A FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 ( Rev : 2008 )
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N-channel 600 V, 0.65 Ω typ., 10 A SuperMESH™ Power MOSFET in I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packages ( Rev : 2012 )
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N-channel 600 V, 0.17 Ω, 17 A FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
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