2SK3125(2006) Datasheet - Toshiba
Part Name
2SK3125
Other PDF
PDF
page
6 Pages
File Size
195.4 kB
MFG CO.
Toshiba
DC-DC Converter, Relay Drive and Motor Drive Applications
• Low drain-source ON resistance: RDS (ON) = 5.3 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 60 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 30 V)
• Enhancement model: Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA)
Part Name
Description
PDF
MFG CO.
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI) ( Rev : 2005 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2006 )
Toshiba
Share Link: