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2SD2113 Datasheet - Inchange Semiconductor

2SD2113 image

Part Name
2SD2113

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page
2 Pages

File Size
78.2 kB

MFG CO.
Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 120V(Min)
·Collector-Emitter Saturation Voltage-: VCE(sat)= 1.5V(Max) @IC= 1.5A
·High DC Current Gain: hFE= 1000(Min) @ IC= 1.5A, VCE= 3V 


APPLICATIONS
·Designed for low frequency poweramplifier applications

Page Link's: 1  2 

Part Name
Description
PDF
MFG CO.
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.

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