2SB1404 Datasheet - New Jersey Semiconductor
Part Name
2SB1404
Description
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2 Pages
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82.7 kB
MFG CO.
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-.. :V(BR)cEo=-120V(Min)
• High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, lc= -1.5A
APPLICATIONS
• Designed for low frequency power amplifier applications.
Part Name
Description
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MFG CO.
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