MFG CO.
ROHM Semiconductor
Medium power transistor (−30V, −1.0A)
FEATUREs
1) High speed switching. (Tf : Typ. : 20ns at IC = −1.0A)
2) Low saturation voltage, typically (Typ. : −150mV at IC = −500mA, IB = −50mA)
3) Strong discharge power for inductive load and capacitance load.
4) Complements the 2SC5730
APPLICATIONs
Small signal low frequency amplifier
High speed switching
Part Name
Description
PDF
MFG CO.
Medium power transistor (30V, 1.0A)
ROHM Semiconductor
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