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2SA1384O Datasheet - Toshiba

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Part Name
2SA1384O

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6 Pages

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MFG CO.
Toshiba
Toshiba Toshiba

High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications

• High voltage: VCBO = −300 V, VCEO = −300 V
• Low saturation voltage: VCE (sat) = −0.5 V (max)
• Small collector output capacitance: Cob = 6 pF (typ.)
• Complementary to 2SC3515
• Small flat package
• PC = 1.0 to 2.0 W (mounted on a ceramic substrate)

 

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Part Name
Description
PDF
MFG CO.
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) ( Rev : 1997 )
Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
Toshiba
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
Toshiba
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) ( Rev : 2002 )
Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused (PCT process) ( Rev : 1997 )
Toshiba

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