DESCRIPTION
The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package.
It is inteded for use in low and medium frequency power applications.
   
■ STMicroelectronics PREFERRED
    SALESTYPE
■ NPN DARLINGTON
■ HIGH CURRENT CAPABILITY
■ INTEGRATED ANTIPARALLEL
    COLLECTOR-EMITTER DIODE