High-Power NPN Silicon Transistors
   
. . . designed for use in industrial–military power amplifer and switching circuit applications.
   
• High Collector Emitter Sustaining —
        VCEO(sus) = 100 Vdc (Min) — 2N6274
                  = 120 Vdc (Min) — 2N6275
                  = 150 Vdc (Min) — 2N6277
• High DC Current Gain —
         hFE = 30–120 @ IC = 20 Adc
             = 10 (Min) @ IC = 50 Adc
• Low Collector–Emitter Saturation Voltage —
         VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc
• Fast Switching Times @ IC 20 Adc
    tr = 0.35 µs (Max)
    ts = 0.8 µs (Max)
    tf = 0.25 µs (Max)
• Complement to 2N6377–79