NPN SILICON TRANSISTORS
... designed for driver circuits, switching and amplifier applications.
FEATURES
* Low Collector-Emitter Saturation Voltage
VCE(sat)=0.6 V (Max.) @ Ic = 1.0 A
* Excellent Safe Operating Area
* Gain Specified to Ic = 1.0 Amp.
* Complement to PNP 2N499.