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1N6821R Datasheet - Microsemi Corporation

1N6821 image

Part Name
1N6821R

Other PDF
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page
3 Pages

File Size
68.5 kB

MFG CO.
Microsemi
Microsemi Corporation Microsemi

Features
● Tungsten/Platinum schottky barrier
● Oxide passivated structure for very low leakage currents
● Guard ring protection for increased reverse energy capability
● Epitaxial structure minimizes forward voltage drop
● Hermetically sealed, low profile ceramic surface mount power package
● Low package inductance
● Very low thermal resistance
● Available as standard polarity (strap-to-anode, 1N6821) and reverse
   polarity (strap-to-cathode: 1N6821R)

Page Link's: 1  2  3 

Part Name
Description
PDF
MFG CO.
LOW VOLTAGE DROP SCHOTTKY DIODE
Microsemi Corporation
LOW VOLTAGE DROP SCHOTTKY DIODE
Microsemi Corporation
LOW VOLTAGE DROP SCHOTTKY DIODE
Microsemi Corporation
Low Forward Voltage drop Diode
Nihon Inter Electronics
Low Forward Voltage Drop Diode
Nihon Inter Electronics
Low Forward Voltage drop Diode
Nihon Inter Electronics
Low Forward Voltage drop Diode
Nihon Inter Electronics
Low Forward Voltage Drop Diode
Nihon Inter Electronics
Low Forward Voltage Drop Diode
Nihon Inter Electronics
Low Forward Voltage drop Diode
Nihon Inter Electronics

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