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1N5711 Datasheet - SUNMATE electronic Co., LTD

1N5711 image

Part Name
1N5711

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2 Pages

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77.6 kB

MFG CO.
SUNMATE
SUNMATE electronic Co., LTD SUNMATE

Features
● For general purpose applications
● Metal-on-silicon Schottky barrier device which is protected
   by a PN junction guard ring. The low forward voltage
   drop and fast switching make it ideal for protection of
   MOS devices, steering, biasing and coupling diodes for
   fast switching and low logic level applications.
● This diode is also available in the MiniMELF case with
   type designation LL5711 and LL6263.
● Pb / RoHS Free

Page Link's: 1  2 

Part Name
Description
PDF
MFG CO.
15mA Axial Leaded Schottky Barrier Diodes
SUNMATE electronic Co., LTD
15mA Axial Leaded Schottky Barrier Diodes
SUNMATE electronic Co., LTD
2.0A Axial Leaded Schottky Barrier Diodes
SUNMATE electronic Co., LTD
150mA Axial Leaded Schottky Barrier Diodes
SUNMATE electronic Co., LTD
100mA Axial Leaded Schottky Barrier Diodes
SUNMATE electronic Co., LTD
350mA Axial Leaded Schottky Barrier Diodes
SUNMATE electronic Co., LTD
30mA Axial Leaded Schottky Barrier Diodes
SUNMATE electronic Co., LTD
0.2A Axial Leaded Schottky Barrier Diodes
SUNMATE electronic Co., LTD
30mA Axial Leaded Schottky Barrier Diodes
SUNMATE electronic Co., LTD
3.0Amp. Axial Leaded Schottky Barrier Diodes
Cystech Electonics Corp.

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