Panasonic Corporation

Both low on-resistance and good cost-performance achieved. PhotoMOS® HE1 Form A

ON Semiconductor

Video Amplifier, 1-Channel, With Reconstruction Filter and SAG Correction

Taiwan Memory Technology

32K X 8 LOW POWER CMOS STATIC RAM

Z-Communications, Inc

VOLTAGE CONTROLLED OSCILLATOR

Z-Communications, Inc

VOLTAGE CONTROLLED OSCILLATOR

Z-Communications, Inc

Voltage-Controlled Oscillator Surface Mount Module

Taiwan Memory Technology

32K X 8 LOW POWER CMOS STATIC RAM

Panasonic Corporation

Both low on-resistance and good cost-performance achieved. PhotoMOS® HE1 Form A

Z-Communications, Inc

VOLTAGE CONTROLLED OSCILLATOR

Renesas Electronics

256k EEPROM (32-kword × 8-bit) Ready/Busy and RES function (HN58V257A)

NXP Semiconductors.

Low-ohmic four-pole double-throw analog switch

Alliance Semiconductor

Λοω ςολταγε 32Κ ξ 8 ΣΡΑΜ

NXP Semiconductors.

Low-ohmic four-pole double-throw analog switch

Panasonic Corporation

Both low on-resistance and good cost-performance achieved. PhotoMOS® HE1 Form A

LAPIS Semiconductor Co., Ltd.

256k(32,768-Word x 8-Bit) FeRAM (Ferroelectric Random Access Memory) SPI

Hitachi -> Renesas Electronics

256k EEPROM (32-kword × 8-bit) Ready/Busy and RES function (HN58V257A)

Panasonic Corporation

Both low on-resistance and good cost-performance achieved. PhotoMOS® HE1 Form A

Integrated Circuit Solution Inc

256K x 8 Hight Speed SRAM with 3.3V

Advanced Micro Devices

256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBit™ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O™ Control