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K10N60 데이터시트

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Infineon Technologies

K10N60_2008

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies

K10N60

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

Match & Start : K10N60

Unspecified

K1060

Field Effect Transistor

Inchange Semiconductor

K1018

N-Channel MOSFET Transistor

Toshiba

K1062

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Fuji Electric

K1089

N-channel MOS-FET - 60V 0,035W 35A 80W

Inchange Semiconductor

K1053

N-Channel MOSFET Transistor

SANYO -> Panasonic

K1069

Low-Frequency General-Purpose Amplifier Applications

Hitachi -> Renesas Electronics

K1094

Silicon N-Channel MOS FET

Inchange Semiconductor

K1006

N-Channel MOSFET Transistor

Hitachi -> Renesas Electronics

K1058

Silicon N-Channel MOS FET

Inchange Semiconductor

K1097

N-Channel MOSFETransistor

Voltage Multipliers Inc

K100F

2,500 V - 10,000 V Rectifiers

Inchange Semiconductor

K1011

N-Channel MOSFET Transistor

Fuji Electric

K1020

N-CHANNEL SILICON POWER MOS-FET

Inchange Semiconductor

K1084

N-Channel MOSFETransistor

Inchange Semiconductor

K1016

N-Channel MOSFET Transistor

Inchange Semiconductor

K1029

N-Channel MOSFET Transistor

Toshiba

TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE

New Jersey Semiconductor

K100S

High Voltage Rectifiers

SANYO -> Panasonic

K1052

Ultrahigh-Speed Switching Applications

SANYO -> Panasonic

K1065

N-Channel Junction Silicon FET

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