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ZXT13P12DE6
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Diodes Incorporated.
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ZXT13P12DE6 데이터시트 - Diodes Incorporated.
Diodes Incorporated.
SUMMARY
VCEO=-12V; RSAT = 37m ; IC= -4A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.
FEATURES
• Extremely Low Equivalent On Resistance
• Extremely Low Saturation Voltage
• hFE characterised up to 15A
• IC=4A Continuous Collector Current
• SOT23-6 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control
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SuperSOT™ 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR ( Rev : 2000 )
Diodes Incorporated.
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