ZX5T3ZTA 데이터시트 - Diodes Incorporated.
제조사

Diodes Incorporated.
Features
• BVCEO > -40V
• IC = -5.5A High Continuous Current
• ICM = -15A Peak Pulse Current
• RCE(SAT) = 29mΩ for a low equivalent On-Resistance
• Low Saturation Voltage VCE(SAT) < -60mV @ -1A
• hFE Specified Up to -10A for High Current Gain Hold Up
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP capable (Note 4)
APPLICATIONs
• Charging Circuits
• DC-DC Converters
• MOSFET and IGBT Gate Driving
• Power Switches
• Motor Control
40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
Zetex => Diodes
40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
Diodes Incorporated.
40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
Zetex => Diodes
40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 ( Rev : 2005 )
Diodes Incorporated.
40V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 ( Rev : 2021 )
Diodes Incorporated.
40V PNP medium power transistor in SOT89
Zetex => Diodes
40V PNP MEDIUM POWER TRANSISTOR IN SOT89
Diodes Incorporated.
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 ( Rev : 2012 )
Diodes Incorporated.
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
Diodes Incorporated.
40V PNP medium power transistor in SOT89 ( Rev : 2007 )
Diodes Incorporated.