Descriptions
The WPMD2013 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. Standard Product WPMD2013 is Pb-free.

FEATUREs
● Trench Technology
● Supper high density cell design
● Excellent ON resistance
● Extremely Low Threshold Voltage
● Small package SOT-563

APPLICATIONs
● DC-DC converter circuit
● Small Signal Switch
● Load Switch
● Level Shift