General Description
This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has beenespecially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and ruggedavalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Converters and power Management inportable and battery operated products.

FEATUREs
■ 110A,50V,RDS(on)(Max 8mΩ)@VGS=10V
■ Ultra-lowGatecharge(Typical133nC)
■ FastSwitchingCapability
■ 100%AvalancheTested
■ MaximumJunctionTemperatureRange(150℃)