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W19B160BTT9H(2009) 데이터시트 - Winbond

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W19B160BTT9H

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47 Pages

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GENERAL DESCRIPTION
   The W19B160B is a 16Mbit, 2.7~3.6 volt CMOS flash memory organized as 2M × 8 or 1M × 16 bits. For flexible erase capability, the 16Mbits of data are divided into one 16Kbyte, two 8Kbyte, one 32Kbyte, and thirty-one 64Kbyte sectors. The word-wide (× 16) data appears on DQ15-DQ0, and byte-wide (× 8) data appears on DQ7−DQ0. The device can be programmed and erased in-system with a standard 2.7~3.6V power supply. A 12-volt VPP is not required. The unique cell architecture of the W19B160B results in fast program/erase operations with extremely low current consumption. The device can also be programmed and erased by using standard EPROM programmers.


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