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VSMF3710(2009) 데이터시트 - Vishay Semiconductors

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VSMF3710

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7 Pages

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144.4 kB

제조사
Vishay
Vishay Semiconductors 

DESCRIPTION
VSMF3710 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a PLCC-2 package for surface mounting (SMD).


FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: λp = 890 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation band width: fc = 12 MHz
• Good spectral matching with Si photodetectors
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
   accordance to WEEE 2002/96/EC
• Find out more about Vishay’s Automotive Grade Product
   requirements at: www.vishay.com/applications


APPLICATIONS
• High speed IR data transmission
• High power emitter for low space applications
• High performance transmissive or reflective sensors


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제조사
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero ( Rev : 2009 )
PDF
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero ( Rev : 2009 )
PDF
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero ( Rev : 2009 )
PDF
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
PDF
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
PDF
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
PDF
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
PDF
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero ( Rev : 2009 )
PDF
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
PDF
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
PDF
Vishay Semiconductors

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