DESCRIPTION
VS-HFA08PB120PbF is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 8 A continuous current, the VS-HFA08PB120PbF is especially well suited for use as the companion diode for IGBTs and MOSFETs.

FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level

BenefitS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count