DESCRIPTION
The VO615A consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-pin plastic dual inline package.
The elements are mounted on one leadframe, providing a fixed distance between input and output for highest safety requirements.

FEATURES
• CTR offered in 9 groups
• Isolation materials according to UL94-VO
• Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664)
• Climatic classification 40/110/21 (IEC 60068 part 1)
• Temperature range - 40 °C to + 110 °C
• Rated impulse voltage (transient overvoltage) VIOTM = 8 kVpeak
• Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
• Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS
• Rated recurring peak voltage (repetitive) VIORM = 850 Vpeak
• Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI ≥ 175
• Thickness through insulation ≥ 0.75 mm
• External creepage distance > 8 mm

APPLICATIONS
Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
• for appl. class I - IV at mains voltage ≤ 300 V
• for appl. class I - IV at mains voltage ≤ 600 V according to table 1 of IEC 60664-1, suitable for:
- Switch-mode power supplies
- Line receiver
- Computer peripheral interface
- Microprocessor system interface