VIT2080S-E3(2013) 데이터시트 - Vishay Semiconductors
제조사

Vishay Semiconductors
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
Trench MOS Barrier Schottky Rectifier
( Rev : V2 )
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
Trench MOS Barrier Schottky Rectifier
( Rev : B14 )
TSC Corporation
Trench MOS Barrier Schottky Rectifier
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
Trench MOS Barrier Schottky Rectifier
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
Trench MOS Barrier Schottky Rectifier
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
Trench MOS Barrier Schottky Rectifier
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
Trench MOS Barrier Schottky Rectifier
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
Trench MOS Barrier Schottky Rectifier
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
Trench MOS Barrier Schottky Rectifier
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
Trench MOS Barrier Schottky Rectifier
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD