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UPA833TF
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제조사
NEC => Renesas Technology
UPA833TF(1997) 데이터시트 - NEC => Renesas Technology
NEC => Renesas Technology
DESCRIPTION
The µPA833TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band.
FEATURES
• Low noise
Q1 : NF = 1.7 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA
Q2 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA
• High gain
Q1 : |S21e|2 = 3.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA
Q2 : |S21e|2 = 8.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 10 mA
• 6-pin thin-type small mini mold package
• 2 different transistors on-chip (2SC5193, 2SC4959)
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제조사
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
NEC => Renesas Technology
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
NEC => Renesas Technology
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD
NEC => Renesas Technology
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