UPA1857 데이터시트 - NEC => Renesas Technology
제조사

NEC => Renesas Technology
DESCRIPTION
The µPA1857 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
FEATURES
• Low on-state resistance
RDS(on)1 = 67.0 mΩ MAX. (VGS = 10 V, ID = 2.0 A)
RDS(on)2 = 86.0 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A)
RDS(on)3 = 95.0 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A)
• Low Ciss Ciss = 580 pF TYP.
• Built-in G-S protection diode against ESD
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N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology