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UPA1716G-E2
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UPA1716G-E2 데이터시트 - NEC => Renesas Technology
NEC => Renesas Technology
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.
FEATURES
• Low on-resistance
RDS(on)1 = 12.5 mΩ TYP. (VGS = –10 V, ID = –4 A)
RDS(on)2 = 17.0 mΩ TYP. (VGS = –4.5 V, ID = –4 A)
RDS(on)3 = 19.0 mΩ TYP. (VGS = –4.0 V, ID = –4 A)
• Low Ciss : Ciss = 2100 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
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