TTC012(2012) 데이터시트 - Toshiba
제조사
Toshiba
Features
(1) High speed switching : tf = 0.15 µs (typ.) (IC = 0.5 A)
(2) High collector breakdown voltage: VCES = 800 V , VCEO = 375 V
APPLICATIONs
• High-Speed High-Voltage Switching
• Switching Voltage Regulators
• High-Speed DC-DC Converters
Bipolar Transistors Silicon PNP Triple-Diffused Type
Toshiba
Bipolar Transistors Silicon PNP Triple-Diffused Type ( Rev : 2021 )
Toshiba
NPN TYPE TRIPLE DIFFUSED SILICON POWER TRANSISTORS
Thinki Semiconductor Co., Ltd.
Silicon NPN Triple Diffused Type
TY Semiconductor
Silicon NPN Triple Diffused Type
TY Semiconductor
Silicon NPN Triple Diffused Type
KEXIN Industrial
SILICON NPN TRIPLE DIFFUSED TYPE
Toshiba
SILICON NPN TRIPLE DIFFUSED TYPE
New Jersey Semiconductor
Silicon NPN Triple Diffused Type
Toshiba
SILICON NPN TRIPLE DIFFUSED TYPE
Toshiba
