TSSS2600(2008) 데이터시트 - Vishay Semiconductors
제조사

Vishay Semiconductors
DESCRIPTION
TSSS2600 is an infrared, 950 nm emitting diode in GaAs technology, molded in a miniature, clear plastic package with side view lens.
FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (L x W x H in mm): 3.6 x 2.2 x 5
• Peak wavelength: λp = 950 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 25°, horizontal
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matched with detector TEST2600
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Infrared source in miniature light barriers or reflective sensor systems with short transmission distances and low forward voltage requirements. Matching with silicon PIN photodiodes or phototransistors (e.g. TEST2600)
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
Vishay Siliconix
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
Vishay Siliconix
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
Vishay Siliconix