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TSPF6200
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Vishay Semiconductors
TSPF6200(2016) 데이터시트 - Vishay Semiconductors
Vishay Semiconductors
DESCRIPTION
TSPF6200 is an infrared, 890 nm emitting diode in GaAlAs / double hetero (DH) technology with high radiant power, high speed, and with typical receiving characteristics, TSPF6200 is molded in a blue gray tinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: λp = 890 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Metering systems
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제조사
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero ( Rev : 2009 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero ( Rev : 2009 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero ( Rev : 2015 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero ( Rev : 2009 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero ( Rev : 2009 )
Vishay Semiconductors
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