DESCRIPTION
TSHF5210 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Leads with stand-off
• Peak wavelength: λp = 890 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 10°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 12 MHz
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
   RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS
• Infrared high speed remote control and free air data
   transmission systems with high modulation frequencies or
   high data transmission rate requirements
• Transmission systems according to IrDA requirements and
   for carrier frequency based systems (e.g. ASK/FSK -
   coded, 450 kHz or 1.3 MHz)
• Smoke-automatic fire detectors