TPCS8101 데이터시트 - Toshiba
제조사

Toshiba
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
● Small footprint due to small and thin package
● Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)
● High forward transfer admittance: |Yfs| = 12 S (typ.)
● Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)
● Enhancement-mode: Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (U-MOS II) ( Rev : 2000 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) ( Rev : 2003 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS II)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS-V)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
Toshiba