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TPCF8302
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TPCF8302(2006) 데이터시트 - Toshiba
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Notebook PC Applications
Portable Equipment Applications
• Low drain-source ON resistance: RDS (ON) = 44 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 6.2 S (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −20 V)
• Enhancement mode: Vth = −0.5 to −1.2 V
(VDS = −10 V, ID = −200 μA)
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) ( Rev : 2002 )
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) ( Rev : 2003 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) ( Rev : 2002 )
Toshiba
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