TPCF8104(Old_V) 데이터시트 - Toshiba
제조사
Toshiba
NOTE BOOK PC APPLICATIONS
PORTABLE EQUIPMENTS APPLICATIONS
Low Drain - Source ON Resistance：ＲＤＳ(ＯＮ)＝26ｍΩ(Typ.)
◾ High Forward Transfer Admittance：|Ｙｆｓ|＝ Ｓ(Typ.)
◾ Low Leakage Current：ＩＤＳＳ＝-10μＡ(Max.) (ＶＤＳ＝-30Ｖ)
◾ Enhancement - Mode：Ｖｔｈ＝-0.8 ～ -2.0Ｖ(ＶＤＳ＝-10Ｖ,Ｉ Ｄ＝-1mＡ)
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type ( Rev : 2008 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ( Rev : 2007 )
Toshiba
