TK8A45D 데이터시트 - Toshiba
제조사

Toshiba
Features
(1) Low drain-source on-resistance: RDS(ON) = 0.73 Ω (typ.)
(2) High forward transfer admittance: |Yfs| = 3.8 S (typ.)
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 450 V)
(4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
APPLICATIONs
• Switching Voltage Regulators
MOSFETs Silicon N-Channel MOS (π-MOSVII) ( Rev : 2011 )
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII) ( Rev : 2011 )
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII) ( Rev : 2011 )
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba