TK46E08N1(2012) 데이터시트 - Toshiba
제조사
Toshiba
Features
(1) Low drain-source on-resistance: RDS(ON) = 6.9 mΩ (typ.) (VGS = 10 V)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)
(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA)
APPLICATIONs
• Switching Voltage Regulators
MOSFETs Silicon N-Channel MOS (U-MOSVII-H)
Toshiba
MOSFETs Silicon N-Channel MOS (U-MOSVII-H) ( Rev : 2017 )
Toshiba
MOSFETs Silicon N-Channel MOS (U-MOS-H)
Toshiba
MOSFETs Silicon N-channel MOS (U-MOS-H)
Toshiba
MOSFETs Silicon N-Channel MOS (U-MOS-H) ( Rev : 2011 )
Toshiba
MOSFETs Silicon N-channel MOS (U-MOS-H)
Toshiba
MOSFETs Silicon N-Channel MOS (U-MOS-H)
Unspecified
MOSFETs Silicon N-channel MOS (U-MOSVIII-H) ( Rev : 2012 )
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSVIII-H)
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSVIII-H) ( Rev : 2012 )
Toshiba
