TK20A60W5 데이터시트 - Toshiba
제조사

Toshiba
Features
(1) Fast reverse recovery time: trr = 110 ns (typ.)
(2) Low drain-source on-resistance: RDS(ON) = 0.15 Ω (typ.)
by used to Super Junction Structure : DTMOS
(3) Easy to control Gate switching
(4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1 mA)
APPLICATIONs
• Switching Voltage Regulators
MOSFETs Silicon N-Channel MOS (DTMOSIV)
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MOSFETs Silicon N-Channel MOS (DTMOSIV)
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV) ( Rev : 2012 )
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV)
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV)
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV)
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV)
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV)
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV) ( Rev : 2012 )
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV) ( Rev : 2012 )
Toshiba