TK16A60W 데이터시트 - Toshiba
제조사

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Features
(1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.)
by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA)
APPLICATIONs
• Switching Voltage Regulators
MOSFETs Silicon N-Channel MOS (DTMOS IV)
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MOSFETs Silicon N-Channel MOS (DTMOS IV)
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MOSFETs Silicon N-Channel MOS (DTMOS IV)
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MOSFETs Silicon N-Channel MOS (DTMOS IV)
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MOSFETs Silicon N-Channel MOS (DTMOS)
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MOSFETs Silicon N-Channel MOS (DTMOS)
Unspecified
MOSFETs Silicon N-Channel MOS (DTMOS)
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MOSFETs Silicon N-Channel MOS (DTMOS)
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MOSFETs Silicon N-Channel MOS (DTMOS Ⅱ ) ( Rev : 2011 )
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MOSFETs Silicon N-Channel MOS (DTMOS II)
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