Toshiba - TK160F10N1L 데이터시트 PDF, 핀배열, 회로도

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TK160F10N1L 데이터시트 - Toshiba

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TK160F10N1L

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MOSFETs Silicon N-channel MOS (U-MOS VIII-H)

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Features
(1) AEC-Q101 qualified
(2) Low drain-source on-resistance: RDS(ON) = 2.0 mΩ (typ.) (VGS = 10 V)
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)
(4) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

APPLICATIONs
• Automotive
• Switching Voltage Regulators
• DC-DC Converters
• Motor Drivers

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