TK12X60U 데이터시트 - Toshiba
제조사
Toshiba
Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON)= 0.36Ω(typ.)
• High forward transfer admittance: ⎪Yfs⎪= 7.0 S (typ.)
• Low leakage current: IDSS= 100 μA (VDS= 600 V)
• Enhancement-mode: Vth= 3.0~5.0 V (VDS= 10 V, ID= 1 mA)
Silicon N-Channel MOS Type Field Effect Transistor
Toshiba
SILICON N-CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR ( Rev : 1998 )
Toshiba
Field Effect Transistor Silicon N Channel MOS Type
New Jersey Semiconductor
Silicon N-Channel MOS Type Field Effect Transistor ( Rev : 2006 )
Toshiba
Silicon N Channel MOS Type Field Effect Transistor
Toshiba
SILICON N-CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR
Toshiba
N-channel MOS Type Silicon Field Effect Transistor
SANYO -> Panasonic
Field Effect Transistor Silicon N-Channel MOS Type
Unspecified
Field Effect Transistor Silicon N Channel MOS Type
Toshiba
Field Effect Transistor Silicon N Channel MOS Type
Toshiba
