TK110Z65Z 데이터시트 - Toshiba
제조사

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Features
(1) Low drain-source on-resistance: RDS(ON) = 0.092 Ω (typ.)
(2) High-speed switching properties with the lower capacitance.
(3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA)
APPLICATIONs
• Switching Power Supplies
MOSFETs Silicon N-Channel MOS ( Rev : 2017 )
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MOSFETs Silicon N-Channel MOS ( Rev : 2014 )
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MOSFETs Silicon N-Channel MOS ( Rev : 2018 )
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MOSFETs Silicon N-Channel MOS
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba
MOSFETs Silicon N-Channel MOS ( Rev : 2014 )
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba