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TK10P60W
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Toshiba
TK10P60W(2012) 데이터시트 - Toshiba
Toshiba
Features
(1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.)
by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)
APPLICATIONs
• Switching Voltage Regulators
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