
NXP Semiconductors.
General description
The TEA1610 is a monolithic integrated circuit implemented in a high-voltage Diffusion Metal Oxide Semiconductor (DMOS) process. The circuit is a high voltage controller for a zero-voltage switching resonant converter. The IC provides the drive function for two discrete power MOSFETs in a half-bridge configuration. It also includes a level-shift circuit, an oscillator with accurately-programmable frequency range, a latched shut-down function and a transconductance error amplifier.
To guarantee an accurate 50 % switching duty factor, the oscillator signal passes through a divide-by-two flip-flop before being fed to the output drivers.
The circuit is very flexible and enables a broad range of applications for different mains voltages.
FEATUREs
■ Integrated high voltage level-shift function
■ Integrated high voltage bootstrap diode
■ Low start-up current (green function)
■ Adjustable dead time
■ Transconductance error amplifier for ultra high-ohmic regulation feedback
■ Latched shut-down circuit for overcurrent and overvoltage protection
■ Adjustable minimum and maximum frequencies
■ Undervoltage lockout
APPLICATIONs
■ TV and monitor power supplies
■ High voltage power supplies